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Hunan Jingtan Automation Equipment Co., LTD.

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City:zhuzhou

Province/State:hunan

Country/Region:china

Contact Person:MsZola Liu

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CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film

Name: CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film
Brand: Jingtan
Price: 12 USD

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Packaging Details :wooden case packing

Supply Ability :30 Piece/Pieces per Quarter

Price :USD12,000-100,000/SET

Brand Name :Jingtan

Certification :CE

MOQ :1 set

Delivery Time :60 days

Payment Terms :L/C/T/T

place of origin :Hunan, China

type :Induction Furnace

usage :deposition furnace

video outgoing-inspection :Provided

machinery test report :Provided

core components :PLC

brand name :Jingtan

voltage :380

weight (t) :2 T

power (kw) :220

key selling points :Competitive Price

Design Temperature (℃) :1250-2200

Woring temperature :900-1200℃

Pressure rise rate (Pa/h) :0.67Pa/h(150Pa/24h)

Heating method :Resistance/induction

Working atmosphere :vacuum/CH4/C3H6/H2/N2/Ar

Furnace type :Square/roundVertical/Horizontal

Furnace cooling mode :furnace shell water cooling

Infrared instrument :single/double colorimetric

Temperature uniformity :±5

Limit vacuum Degree(Pa) :1-100

Marketing Type :Ordinary Product

Warranty of core components :1 Year

Applicable Industries :Other, semiconductor

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Specification:

Vacuum deposition furnace:

Mainly used for the preparation of carbon-carbon composite materials, and the deposition furnace is mainly used for the preparation of pyrolytic carbon coating on the surface of graphite, semiconductor devices and heat-resistant scour materials.

Parameter /Model No.	JT-0305-C	JT-0505-C	JT-0608-C	JT-0608-C	JT-0812-C	JT-1120-C	JT-1218-C	JT-1520-C
Working Zone Size φ×H(mm)	300×500	500×500	600×800	600×1200	800×1200	1100×2000	1200×1800	1500×2000
Highest Temperature (℃)	2300	2300	2300	2300	2300	2300	2300	2300
Temperature uniformity(℃)	±5	±5	±5/±7.5	±7.5/±10	±7.5/±10	±10/±15	±10/±15	±15/±20
Limit Vacuum Degree(Pa)	1-100	1-100	1-100	1-100	1-100	1-100	1-100	1-100
Limit Vacuum Degree(Pa)	0.67	0.67	0.67	0.67	0.67	0.67	0.67	0.67
Heating method	Resistance/induction	Resistance/induction	Resistance/induction	Resistance/induction	Resistance/induction	Resistance/induction	Resistance/induction	Resistance/induction

CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film

Design temperature	1250℃/1650℃/1800℃/2200℃
Common temperature	900~1200℃
Vacuum degree	< 50Pa
Pressure rise rate	6.67pA /h(or 150Pa/24h) in cold state of empty furnace
Heating mode	graphite resistance heating or induction heating, independent temperature control, good temperature uniformity
Atmosphere medium	vacuum /CH4/C3H6/H2/N2/Ar

Gas control mode	mass flow meter control, multi-channel gas path, uniform flow field, no deposition dead Angle, good deposition effect;Multi-stage and efficient exhaust treatment system, environmentally friendly, easy to clean up
Furnace type	square, round, vertical or horizontal structure (non-standard design), fully enclosed deposition chamber, good sealing effect, strong anti-pollution ability;
Furnace cooling mode	furnace shell water cooling, external circulation quick cooling system can be selected, short cooling time, high production efficiency;

Structure form	horizontal - side discharge, vertical - up/down discharge
Locking mode	manual/automatic
Shell material	inner stainless steel/all stainless steel
Insulation material	carbon felt/graphite felt/carbon fiber cured felt
Infrared instrument	single colorimetric/double colorimetric
Power supply	KGPS/IGBT(only suitable for medium frequency heating) Product parameter:

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